Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy
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United States of America Patent
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Dec 18, 2018
Grant Date -
Dec 28, 2017
app pub date -
Aug 23, 2017
filing date -
Mar 25, 2016
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Abstract
A semiconductor structure includes a substrate, first gate structures and second gate structures over the substrate, third epitaxial semiconductor features proximate the first gate structures, and fourth epitaxial semiconductor features proximate the second gate structures. The first gate structures have a greater pitch than the second gate structures. The third and fourth epitaxial semiconductor features are at least partially embedded in the substrate. A first proximity of the third epitaxial semiconductor features to the respective first gate structures is smaller than a second proximity of the fourth epitaxial semiconductor features to the respective second gate structures. In an embodiment, a first depth of the third epitaxial semiconductor features embedded into the substrate is greater than a second depth of the fourth epitaxial semiconductor features embedded into the substrate.
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