Semiconductor device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11810824
APP PUB NO 20230065708A1
SERIAL NO

17461608

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Abstract

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A method for manufacturing a semiconductor device is provided. The method includes forming a semiconductor fin over a substrate; forming an isolation feature adjacent semiconductor fin; recessing the isolation feature to form a recess; forming a metal-containing compound mask in the recess; depositing a stress layer over the metal-containing compound mask, such that the stress layer is in contact with a top surface of the metal-containing compound mask; and annealing the metal-containing compound mask when the stress layer is in contact with the top surface of the metal-containing compound mask.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chui, Chi On Hsinchu, TW 401 1002
Ko, Chung-Ting Kaohsiung, TW 71 83
Lin, Sung-En Hsinchu County, TW 33 12

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