Apparatus for controlling a plasma reaction
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United States of America Patent
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Nov 2, 1982
Issued Date -
N/A
app pub date -
Nov 10, 1980
filing date -
Jun 25, 1979
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An apparatus and method for controlling a plasma etching reaction. The plasma reaction is controlled by monitoring the output voltage of an optical detector which is responsive to emissions emanating from the reaction. As the output of the detector changes indicating that the first portion of the etching process has been completed, the average power density supplied to the reaction is reduced by switching the applied power from a continuous wave to a pulsed mode. The reaction is allowed to continue to completion in the reduced power mode.
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