Semiconductor device with reduced current consumption in standby state
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United States of America Patent
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-
Jan 31, 2006
Grant Date -
Aug 5, 2004
app pub date -
Oct 6, 2003
filing date -
Jan 30, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In order to reduce a gate-source leakage current in a standby state, the gate insulating film of one of transistors in each of inverters IV1-IV5 is made thick. In a standby state, an input signal IN has L level and accordingly one of the transistors in inverters IV1-IV5 each that is connected to a main power supply line or a main ground line is turned on. The turned-on transistors have the gate insulating film which is made thicker than that of normal transistors to reduce the gate leakage current thereby reduce current consumption in the standby state.
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