Process apparatus and method for improving plasma production of an inductively coupled plasma

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7255774
APP PUB NO 20040060517A1
SERIAL NO

10255460

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space for containing a substrate to be processed with a plasma formed within the chamber. A dielectric window interfaces with the processing chamber proximate the processing space. A core element formed of a material having a high magnetic permeability is positioned outside of the chamber proximate the dielectric window, and an electrically conductive element surrounds a portion of the core element of high magnetic permeability. The conductive element, when electrical current is conducted thereby, is operable for coupling a magnetic flux into the chamber through the dielectric window for affecting a plasma in the processing space. The core element is configured for directing a portion of the magnetic flux in a direction toward the dielectric window to efficiently couple the channeled flux into the processing chamber through the dielectric window.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sill, Edward L Escondido, CA 12 381
Vukovic, Mirko Gilbert, AZ 32 1562

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