Method of forming CMOS imager with storage capacitor
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United States of America Patent
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-
Feb 8, 2005
Grant Date -
Aug 29, 2002
app pub date -
Apr 26, 2002
filing date -
Jul 14, 1999
priority date (Note) -
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Abstract
A CMOS imager having an improved signal to noise ratio and improved dynamic range is disclosed. The CMOS imager provides improved charge storage by fabricating a storage capacitor in parallel with the photocollection area of the imager. The storage capacitor may be a flat plate capacitor formed over the pixel, a stacked capacitor or a trench imager formed in the photosensor. The CMOS imager thus exhibits a better signal-to-noise ratio and improved dynamic range. Also disclosed are processes for forming the CMOS imager.
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