Semiconductor device having electrically insulating substrate of SiC
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United States of America Patent
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Feb 18, 1986
Issued Date -
N/A
app pub date -
Dec 16, 1982
filing date -
Nov 5, 1979
priority date (Note) -
Expired
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Abstract
Disclosed are semiconductor devices in which an electrical insulating substrate is made of a sintered silicon carbide body having thermal conductivity of at least 0.4 cal/cm.multidot.sec.multidot..degree.C. at 25.degree. C., electrical resistivity of at least 10.sup.7 ohm.multidot.cm at 25.degree. C. and coefficient of thermal expansion of 3.3.about.4.times.10.sup.-6 /.degree.C. at 25.degree. C. to 300.degree. C.
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