Importance

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Abstract

An electrostatic discharge protection structure is provided with a dielectric gate, source and drain contacts, and a semiconductor substrate. The semiconductor substrate is of a first conductivity type having the dielectric gate disposed partially on its surface. The source and drain contacts are connected to source and drain diffusion regions of a second conductivity type separated by the dielectric gate. Deep source and drain wells of the second conductivity type respectively disposed under the source and drain diffusion regions define a channel region of the first conductivity type. The channel region is doped so that the surface breakdown voltage is exceeded before the subsurface depletion region punch-through voltage is exceeded between the deep source and drain wells upon an electrostatic discharge at the drain contact.

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First Claim