Multi-layered unit including electrode and dielectric layer
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United States of America Patent
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Apr 26, 2005
Grant Date -
Aug 26, 2004
app pub date -
Feb 26, 2003
filing date -
Feb 26, 2003
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Abstract
A multi-layered unit according to the present invention includes a support substrate formed of a silicon single crystal, a barrier layer formed of silicon oxide on the support substrate, an electrode layer, which is formed of BSCCO (bismuth strontium calcium copper oxide) having a stoichiometric composition represented by Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8, having an anisotropic property and conductivity and enabling epitaxial growth of a dielectric material containing a bismuth layer structured compound thereon and is oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound having a composition represented by SrBi.sub.4 Ti.sub.4 O.sub.15 on the electrode layer and oriented in the c axis direction on the electrode layer.
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