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Abstract

A hybrid memory device uses an array of hybrid memory cells with each hybrid memory cell having a static RAM cell and a plurality of ROM cells. The hybrid memory device includes a read/write control unit for controlling a reading/writing operation of a selected hybrid memory cell in accordance with a write control signal and a read control signal; a decoder for decoding an address temporarily stored in a buffer in accordance with a first enable signal and a second enable signal, the address including a column address and a row address; a column line selecting unit for selecting a column line of the hybrid memory cell array in accordance with the column address decoded by the decoder; a wordline driving unit for driving a wordline of the hybrid memory cell array in accordance with the row address decoded by the decoder; a static RAM data input/output unit for storing external data in the static RAM cell of the selected hybrid memory cell or externally outputting data stored in the static RAM cell of the selected hybrid memory cell; and a ROM data output unit for externally outputting data stored in a selected ROM cell among the plurality of ROM cells of the selected hybrid memory cell.

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First Claim