Metal oxide sensors and method of forming
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United States of America Patent
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Apr 24, 2007
Grant Date -
Nov 30, 2006
app pub date -
May 25, 2005
filing date -
May 25, 2005
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Abstract
A metal oxide sensor is provided on a semiconductor substrate to provide on-chip sensing of gases. The sensor may include a metal layer that may have pores formed by lithography to be of a certain width. The top metal layer may be oxidized resulting in a narrowing of the pores. Another metal layer may be formed over the oxidized layer and electrical contacts may be formed on the metal layer. The contacts may be coupled to a monitoring system that receives electrical signals indicative of gases sensed by the metal oxide sensor.
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