Phase change memory device and method of forming the same
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United States of America Patent
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Dec 29, 2009
Grant Date -
Apr 24, 2008
app pub date -
Oct 16, 2007
filing date -
Oct 20, 2006
priority date (Note) -
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Abstract
Provided are a phase change memory device and a method of forming the same. According to the phase change memory, a first plug electrode and a second plug electrode are spaced apart from each other in a mold insulating layer. A phase change pattern is disposed on the mold insulating layer. The phase change pattern contacts a top of the first plug electrode and a first potion of a top of the second plug electrode. An interconnection is electrically connected to a second portion of the top of the second plug electrode.
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