Integrated circuit devices and method of manufacturing the same

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United States of America Patent

PATENT NO 10734280
APP PUB NO 20190148226A1
SERIAL NO

16154896

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Abstract

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An integrated circuit (IC) device includes a substrate having a fin-type active region extending in a first direction, a gate structure intersecting the fin-type active region on the substrate, the gate structure extending in a second direction perpendicular to the first direction and parallel to a top surface of the substrate, source and drain regions on both sides of the gate structure, and a first contact structure electrically connected to one of the source and drain regions, the first contact structure including a first contact plug including a first material and a first wetting layer surrounding the first contact plug, the first wetting layer including a second material having a lattice constant that differs from a lattice constant of the first material by about 10% or less.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Kuo Tai Seongnam-si, KR 8 228
Hyun, Sang-jin Suwon-si, KR 75 1021
Kim, Wan-don Seongnam-si, KR 56 516
Yim, Jeong-hyuk Seoul, KR 3 40

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