High voltage MOS-gated power device and related manufacturing process
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United States of America Patent
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Aug 1, 2006
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app pub date -
May 6, 2003
filing date -
Dec 9, 1998
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Abstract
MOS-gated power device including a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type. A plurality of doped regions of a first conductivity type is formed in the semiconductor material layer, each one of the doped regions being disposed under a respective body region and being separated from other doped regions by portions of the semiconductor material layer.
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