Method of fabricating non-volatile memory device with concavely depressed electron injection region
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United States of America Patent
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Apr 12, 2011
Grant Date -
Jan 1, 2009
app pub date -
Jun 24, 2008
filing date -
Jun 26, 2007
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Abstract
Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device comprises: a control gate region formed by doping a semiconductor substrate with second impurities; an electron injection region formed by doping the semiconductor substrate with first impurities, where a top surface of the electron injection region includes a tip portion at an edge; a floating gate electrode covering at least a portion of the control gate region and the tip portion of the electron injection region; a first tunnel oxide layer interposed between the floating gate electrode and the control gate region; a second tunnel oxide layer interposed between the floating gate electrode and the electron injection region; a trench surrounding the electron injection region in the semiconductor substrate; and a device isolation layer pattern filled in the trench.
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