High die strength semiconductor wafer processing method and system

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United States of America Patent

PATENT NO 8809166
SERIAL NO

13721674

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Abstract

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Embodiments of methods and systems for processing a semiconductor wafer are described. In one embodiment, a method for processing a semiconductor wafer involves performing laser stealth dicing on the semiconductor wafer to form a stealth dicing layer within the semiconductor wafer and after performing laser stealth dicing, cleaning the semiconductor wafer from a back-side surface of the semiconductor wafer with a blade to remove at least a portion of the stealth dicing layer. Other embodiments are also described.

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Patent Owner(s)

  • NXP B.V.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Albermann, Guido Hamburg, DE 13 67
Buenning, Hartmut Hamburg, DE 15 126
Lapke, Martin Hamburg, DE 9 65
Moeller, Sascha Hamburg, DE 17 103
Rohleder, Thomas Hamburg, DE 7 58

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