Reduced hydrogen sidewall spacer oxide
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United States of America Patent
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Feb 6, 2007
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app pub date -
Oct 6, 2004
filing date -
Dec 17, 2003
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Abstract
An embodiment of the invention is a method of making a semiconductor structure 10 where the spacer oxide layer 90 is formed by a hydrogen free precursor CVD process. Another embodiment of the invention is a semiconductor structure 10 having a spacer oxide layer 90 with a hydrogen content of less than 1%.
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