Protection circuit for power management semiconductor devices and power converter having the protection circuit

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United States of America Patent

PATENT NO 7295412
APP PUB NO 20040252432A1
SERIAL NO

10773283

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.

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Patent Owner(s)

  • HITACHI POWER SEMICONDUCTOR DEVICE, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishikawa, Katsumi Hitachinaka, JP 65 855
Saito, Ryuichi Hitachi, JP 135 2611
Sasaki, Masataka Hitachi, JP 26 386
Suda, Koichi Mito, JP 30 302
Takahashi, Katsuaki Hitachiota, JP 65 887

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