Method for fabricating transistor of semiconductor device
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United States of America Patent
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Jan 1, 2008
Grant Date -
Nov 2, 2006
app pub date -
Dec 30, 2005
filing date -
Apr 29, 2005
priority date (Note) -
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Abstract
A method for fabricating a transistor of a semiconductor device is provided. The method includes: forming device isolation layers in a substrate including a bottom structure, thereby defining an active region; etching the active region to a predetermined depth to form a plurality of recess structures each of which has a flat bottom portion with a critical dimension (CD) larger than that of a top portion; and sequentially forming a gate oxide layer and a metal layer on the recess structures; and patterning the gate oxide layer and the metal layer to form a plurality of gate structures.
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