Importance

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Abstract

A multi-quantum well infrared photo-detector, in which a plurality of multi-quantum well layers having respective sensitivities for different wavelength ranges of infrared are layered via a common contact layer. The infrared photo-detector includes a switch where one end is connected to the above common contact layer, and a current integration unit which is connected to the other end of the above switch. First and second voltages are applied to first and second contact layers at the opposite side of first and second multi-quantum well layer respectively. The above switch is conducted for a predetermined time so that either voltage between the above common contact layer and the first contact layer or voltage between the above common contact layer and the second contact layer becomes higher than the other, and the above current integration unit is charged or discharged by the current which flows in the above multi-quantum well layers.

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First Claim