Semiconductor device and method of manufacturing same
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United States of America Patent
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Nov 7, 2006
Grant Date -
Sep 15, 2005
app pub date -
Aug 31, 2004
filing date -
Mar 9, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides a semiconductor device formed with a diode array together with bipolar transistors, which is capable of preventing the occurrence of crystal defects developed in cross patterns in deep trench regions and improving device yields, and a method of manufacturing the semiconductor device. A semiconductor device includes a LOCOS oxide film which isolates a plurality of diodes in an X direction, and deep trenches which isolate the plurality of diodes in a Y direction. The depth of each of the deep trenches is deeper than a high density layer embedded below a collector layer of each bipolar transistor. A shallow trench may be used as an alternative to the LOCOS oxide film.
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