Semiconductor etching process to release single crystal silicon mirrors
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 23, 2010
Grant Date -
N/A
app pub date -
Nov 1, 2005
filing date -
Nov 1, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
provides boron, which becomes incorporated on the surface of the etched single crystal silicon as a passivation layer controlling etch profile. Plasma etching of the single crystal silicon to release the mirrors takes place in the absence of oxygen, in order to avoid unwanted formation of silicon oxide residue that can adversely affect mechanical and optical properties of the resulting device.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully