Method of fabricating semiconductor device

United States of America Patent

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Mar 15, 2011
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Oct 8, 2009
app pub date
Dec 16, 2008
filing date
Apr 4, 2008

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Abstract

In a method of fabricating a semiconductor device having vertical channels and a method of patterning a gate electrode of such semiconductor device, an initial conductive layer is removed by multiple etching processes.

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HYNIX SEMICONDUCTOR INC.

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Cho, Sang-Hoon	Icheon-si, KR	19	117
Cho, Yun-Seok	Icheon-si, KR	22	140
Lee, Chun-Hee	Icheon-si, KR	13	91
Park, Sang-Hoon	Icheon-si, KR	116	843

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Method of fabricating semiconductor device

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United States of America Patent

12336487

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PATENT NO	7906398
APP PUB NO	20090253254A1
SERIAL NO	12336487
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
March 15, 2011	US,7906398,B2 US7906398B2	GRANTED PATENT AS SECOND PUBLICATION
October 08, 2009	US,20090253254,A1 US20090253254A1	FIRST PUBLISHED PATENT APPLICATION

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12336487

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