Writing memory cells exhibiting threshold switch behavior

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United States of America Patent

PATENT NO 8031516
APP PUB NO 20100149856A1
SERIAL NO

12333518

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Abstract

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A memory cell exhibiting threshold switch behavior, such as a phase change memory, can be programmed in a way that eliminates the need for a separate post-programming verification cycle. In particular, a circuit can be used to apply the programming pulse to a cell in a way that determines whether the cell has reached the desired threshold voltage. If the cell has not reached the desired threshold voltage, it receives another programming pulse. If it has, it does not receive another programming pulse. Thus, by applying a voltage across the cell that never exceeds the threshold voltage of the cell, the need for a separate verification cycle can be eliminated in some embodiments.

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Patent Owner(s)

  • NUMONYX B.V.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tang, Stephen Fremont, US 22 592

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