Void free, silicon filled trenches in semiconductors

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Jan 2, 2007
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Jul 1, 2004
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Jul 1, 2004

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Abstract

The present invention provides methods of producing substantially void-free trench structures. After deposition of an a-Si or polysilicon layer in a trench formed in a semiconductor, the a-Si or polysilicon is exposed to hydrogen at an elevated temperature.

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POLARIS INNOVATIONS LIMITED

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Haupt, Moritz	Dresden, DE	9	257

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Void free, silicon filled trenches in semiconductors

Number of patents in Portfolio can not be more than 2000

United States of America Patent

10882752

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US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
January 02, 2007	US,7157327,B2 US7157327B2	GRANTED PATENT AS SECOND PUBLICATION
January 05, 2006	US,20060003523,A1 US20060003523A1	FIRST PUBLISHED PATENT APPLICATION

PATENT NO	7157327
SERIAL NO	10882752
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10882752

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