LDC implant for mirrorbit to improve Vt roll-off and form sharper junction
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United States of America Patent
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Feb 13, 2007
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N/A
app pub date -
Jun 7, 2004
filing date -
Jun 7, 2004
priority date (Note) -
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Abstract
The present invention pertains to implementing a lightly doped channel (LDC) implant in fashioning a memory device to improve Vt roll-off, among other things. The lightly doped channel helps to preserve channel integrity such that a threshold voltage (Vt) can be maintained at a relatively stable level and thereby mitigate Vt roll-off. The LDC also facilitates a reduction in buried bitline width and thus allows the bitlines to be brought closer together. As a result more devices can be formed or 'packed' within the same or a smaller area.
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