Fabrication methods for compressive strained-silicon and transistors using the same
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United States of America Patent
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Oct 16, 2007
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app pub date -
Aug 3, 2004
filing date -
May 18, 2004
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Abstract
Fabrication methods for compressive strained-silicon by ion implantation. Ions are implanted into a silicon-containing substrate and high temperature processing converts the vicinity of the ion-contained region into strained-silicon. Transistors fabricated by the method are also provided.
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