Semiconductor memory device comprising one or more high-resistance elements

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United States of America Patent

PATENT NO 5307308
SERIAL NO

07746277

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Abstract

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A semiconductor memory device comprises a plurality of memory cells, and each of the memory cells includes a transistor region in which one or more transistors included in the memory cell are formed and a high-resistance element region in a resistor layer overlying the transistor region in which one or more high-resistance elements are formed. The high-resistance element region has a shape different from that of the transistor region and occupies an area not larger than that of the transistor region.

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Patent Owner(s)

  • MITSUBISHI DENKI KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Noguchi, Takeshi Hyogo, JP 75 963

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