Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device

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United States of America

PATENT NO 11967648
APP PUB NO 20230050036A1
SERIAL NO

17967001

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Abstract

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The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kishida, Hideyuki Ashikaga, JP 108 2868
Mashiyama, Mitsuo Oyama, JP 33 407
Nakashima, Motoki Atsugi, JP 59 378
Okazaki, Kenichi Tochigi, JP 342 4057
Watanabe, Masahiro Tochigi, JP 556 6817
Yamazaki, Shunpei Setagaya, JP 7287 226813

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