System and method for extending lifetime of memory device

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United States of America Patent

PATENT NO 11972826
APP PUB NO 20230009913A1
SERIAL NO

17370763

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Disclosed herein are related to a system and a method of extending a lifetime of a memory cell. In one aspect, a memory controller applies a first pulse having a first amplitude to the memory cell to write input data to the memory cell. In one aspect, the memory controller applies a second pulse having a second amplitude larger than the first amplitude to the memory cell to extend a lifetime of the memory cell. The memory cell may include a resistive memory device or a phase change random access memory device. In one aspect, the memory controller applies the second pulse to the memory cell to repair the memory cell in response to determining that the memory cell has failed. In one aspect, the memory controller periodically applies the second pulse to the memory cell to extend the lifetime of the memory cell before the memory cell fails.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Heh, Dawei Hsinchu, TW 3 2
Kuo, WenHsien Hsinchu, TW 2 2
Lee, Yung-Huei New Taipei, TW 12 91
Liao, Pei-Chun Hsinchu, TW 37 173
Lin, Jian-Hong Yunlin, TW 61 485

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