Plasma-assisted etching of metal oxides

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United States of America

PATENT NO 11282711
APP PUB NO 20220037163A1
SERIAL NO

16944653

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The present disclosure describes methods and systems for plasma-assisted etching of a metal oxide. The method includes modifying a surface of the metal oxide with a first gas, removing a top portion of the metal oxide by a ligand exchange reaction, and cleaning the surface of the metal oxide with a second gas.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Keh-Jeng Hsinchu, TW 47 709
Yang, Chan-Lon Taipei, TW 139 2264
Yang, Chansyun David Shinchu, TW 47 69

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