Sense amplifying magnetic tunnel device
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United States of America Patent
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Mar 7, 2006
Grant Date -
Dec 15, 2005
app pub date -
May 27, 2004
filing date -
May 27, 2004
priority date (Note) -
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status (Latency Note)
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Abstract
A sense amplifying magnetic tunnel (SAMT) device is disclosed. In a particular embodiment, a field effect transistor (FET) having a drain, a source, a channel therebetween, a gate electrode and a tunneling gate oxide proximate to the channel is provided. In addition, a spin valve memory (SVM) cell is provided electrically coupled to the gate electrode. The electrical coupling between the SVM cell and the gate electrode serves to provide a control potential to the gate. In addition, the coupling provides a gain to a current passed through the SAMT device.
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