Process for selective deposition of tungsten on semiconductor wafer
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United States of America Patent
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-
Aug 27, 1991
Grant Date -
N/A
app pub date -
Dec 1, 1989
filing date -
Dec 1, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An improved process for the selective deposition of tungsten on a masked semiconductor wafer is disclosed which comprises cleaning the surfaces of the wafer in an air-tight cleaning chamber, then transferring the cleaned wafer to a vacuum deposition chamber such as a CVD chamber for selective deposition of tungsten thereon without exposing the cleaned wafer to conditions which would recontaminate the cleaned wafer prior to said deposition, and then selectively depositing tungsten on the unmasked surfaces of the cleaned wafer.
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