Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same

United States of America Patent

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Oct 12, 2010
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Dec 16, 2004
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Jun 13, 2003
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Jun 13, 2003

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Expired

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Abstract

A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.

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INTERNATIONAL BUSINESS MACHINES CORPORATION

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Cohen, Guy Moshe	Mehegan Lake, US	40	1489
Mooney, Patricia May	Mount Kisco, US	5	335

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Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

10460628

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PATENT NO	7812340
APP PUB NO	20040253792A1
SERIAL NO	10460628
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
October 12, 2010	US,7812340,B2 US7812340B2	GRANTED PATENT AS SECOND PUBLICATION
December 16, 2004	US,20040253792,A1 US20040253792A1	FIRST PUBLISHED PATENT APPLICATION

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10460628

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