Semiconductor memory device and method of testing same

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United States of America Patent

PATENT NO 7913126
APP PUB NO 20080101142A1
SERIAL NO

11976652

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Abstract

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Provided is a semiconductor memory device in which it is possible to conduct a parallel test by comparison with an expected value after replacement with a redundant cell. The memory device includes a logic circuit for outputting an activated redundant hit signal when at least one determination circuit of determination circuits corresponding to respective ones of a plurality of redundant addresses is activated; a logic circuit for outputting an activated signal when all outputs of the circuits are inactive; and a selector for outputting a test-result mask signal when a redundant area is tested, and outputting the output of the logic circuit when a normal area is tested. The test result is forcibly passed when a memory array is tested and when a redundant address is accessed.

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Patent Owner(s)

  • LONGITUDE SEMICONDUCTOR S.A.R.L.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nakagawa, Hiroshi Tokyo, JP 245 3528
Oishi, Kanji Tokyo, JP 44 836

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