Semiconductor device and method manufacturing semiconductor device
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United States of America Patent
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Sep 14, 2010
Grant Date -
Aug 16, 2007
app pub date -
Jan 31, 2007
filing date -
Jan 31, 2006
priority date (Note) -
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status (Latency Note)
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Abstract
The disclosure concerns a method of manufacturing a semiconductor device including forming a plurality of fins made of a semiconductor material on an insulating layer; forming a gate insulating film on side surfaces of the plurality of fins; and forming a gate electrode on the gate insulating film in such a manner that a compressive stress is applied to a side surface of a first fin which is used in an NMOSFET among the plurality of fins in a direction perpendicular to the side surface and a tensile stress is applied to a side surface of a second fin which is used in a PMOSFET among the plurality of fins in a direction perpendicular to the side surface.
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