Semiconductor laser device and method of fabricating the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
Oct 10, 2006
Grant Date -
N/A
app pub date -
Mar 22, 2000
filing date -
Mar 24, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a semiconductor laser device, an AlGaN buffer layer, a GaN layer, an n-GaN layer, an n-AlGaN cladding layer, an MQW light emitting layer, a p-AlGaN cladding layer, a p-first GaN cap layer, a current blocking layer composed of n-AlGaN, and a p-second GaN cap layer are stacked in this order on a sapphire substrate, and a ridge portion having an upper surface having a width W.sub.1 is formed by etching. The current blocking layer has an opening having a width W.sub.2 on the upper surface of the ridge portion. The width W.sub.2 of the opening is smaller than the width W.sub.1 of the upper surface of the ridge portion. Accordingly, in a light emitting region of the MQW light emitting layer, a saturable light absorbing region is formed on both sides of a current injection region.
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