Stacked MOS device with means to prevent substrate floating
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United States of America Patent
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-
Feb 18, 1986
Issued Date -
N/A
app pub date -
Apr 3, 1984
filing date -
Jun 16, 1980
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An MOS type semiconductor device having a semiconductor substrate, an insulating layer formed in or on said semiconductor substrate, and an MOS transistor formed on said insulating layer, characterized in that said insulating layer is formed at a region below said MOS transistor excluding at least part of the region below a channel region of said MOS transistor.
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