Static random access memory having variable supply voltages to the memory cells and method of operating thereof
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United States of America Patent
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Feb 3, 1998
Grant Date -
N/A
app pub date -
Oct 17, 1996
filing date -
Oct 25, 1995
priority date (Note) -
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Abstract
A memory cell includes a load transistor pair serving as a high data holding element, a drive transistor pair serving as a low data holding element, and an access transistor pair for accessing the high data holding element or the low data holding element. A high data holding potential corresponding to the source potential of the load transistor pair is set at a value larger than a supply potential, and a low data holding potential corresponding to the source potential of the drive transistor pair is set at a value larger than a ground potential. In a read operation, a source potential control line of a selected memory cell is connected with a ground line through a source line switch.
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