Semiconductor structure with nanostructure and method for manufacturing the same

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United States of America Patent

PATENT NO 11348836
APP PUB NO 20200343140A1
SERIAL NO

16924546

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Abstract

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Semiconductor structures and methods for forming the same are provided. The method includes forming a fin protruding from a substrate and forming an isolation structure surrounding the fin. The method also includes epitaxially growing channel fins on sidewalls of the fin over the isolation structure and etching the fin to form a space between the channel fins. The method further includes forming a gate structure to fill the space between the channel fins.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chou, Chih-Chao Hsinchu, TW 33 69
Lin, Chun-Hsiung Zhubei, TW 113 975
Wang, Chih-Hao Baoshan Township, Hsinchu County, TW 1018 6870
Wang, Pei-Hsun Kaohsiung, TW 46 87

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