Memory device and a method for operating the same
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United States of America Patent
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Mar 26, 2024
Grant Date -
Mar 2, 2023
app pub date -
May 4, 2022
filing date -
Aug 27, 2021
priority date (Note) -
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status (Latency Note)
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Abstract
A method for operating a memory device is provided. The method includes providing a high voltage signal to a memory cell array including a plurality of memory cells using a first wiring, providing a logic signal to the memory cell array using a second wiring, and providing a shielding signal to the memory cell array using a third wiring arranged between the first wiring and the second wiring. A highest voltage level of the logic signal is lower than a highest voltage level of the high voltage signal, and the shielding signal includes a negative first voltage level in a first mode and a positive second voltage level in a second mode.
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