Method for fabricating a local interconnect in a semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9997522
APP PUB NO 20170162581A1
SERIAL NO

14958769

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Importance

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Abstract

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A semiconductor device comprises a first gate electrode disposed on a substrate, a first source/drain region, and a local interconnect connecting the first gate electrode and the first source/drain region. The local interconnect is disposed between the substrate and a first metal wiring layer in which a power supply line is disposed. The local interconnect has a key hole shape in a plan view, and has a head portion, a neck portion and a body portion connected to the head portion via the neck portion. The neck portion is disposed over the first gate electrode and the body portion is disposed over the first source/drain region.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yen-Ming Chu-Pei, TW 323 2169
Chen, Ying-Yan Hsinchu, TW 13 71
Lai, Jui-Yao Changhwa, TW 21 406
Yeh, Jeng-Ya David Hsinchu, TW 31 317
Yeong, Sai-Hooi Zhubei, TW 432 893

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