Heterojunction bipolar transistor with a silicon oxide layer on a silicon germanium base

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United States of America

PATENT NO 11282947
APP PUB NO 20220069109A1
SERIAL NO

17009831

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Abstract

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A heterojunction bipolar transistor may include a base epitaxially grown on a collector, an emitter epitaxially grown on the base, the emitter and the base being patterned into a fin, and a silicon oxide layer formed on sidewalls of the fin, the silicon oxide layer separating the base from a spacer. The heterojunction bipolar transistor may include the spacer formed on top of the silicon oxide layer and an interlayer dielectric formed on top of the spacer. The heterojunction bipolar transistor may also include a silicon germanium oxide layer formed on sidewalls of the base. The base may be made of silicon germanium. The emitter and the collector may be made of silicon. The base may be doped with a p-type dopant. The emitter and the collector may be doped with a n-type dopant.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Choonghyun Rensselaer, US 414 1888
Ok, Injo Loudonville, US 167 689
Reznicek, Alexander Troy, US 1406 11120
Seo, Soon-Cheon Glenmont, US 194 1179

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