Method of optimizing an N-gram memory structure

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United States of America Patent

PATENT NO 5966709
SERIAL NO

08939023

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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By placing a low cardinality node or a leaf in a lower level, and a high cardinality node or a leaf at a higher level, an optimal memory structure is automatically generated which yields the best compression within N-gram technology. After making an initial list of parallel streams or fields, the streams are ordered in accordance with increasing cardinality. Adjacent streams (fields), or nodes, are paired, and the children of the resulting node are eliminated from the list, while a new parent node is added to the list. The resulting new list is re-arranged from right to left as a function of increasing cardinality, and the pairing steps are repeated until a single root node is remains for the final memory structure.

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Patent Owner(s)

  • AGGREGATE KNOWLEDGE, INC.;RAYMOND, WALSH & ENWRIGHT P.C., AS AGENT

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bugajski, Joseph M Ypsilanti, MI 4 183
Raghavan, K R Canton, MI 2 97
Zhang, Tao Ann Arbor, MI 950 8528

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