Isolation scheme for reducing film stress in a MEMS device
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United States of America Patent
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Apr 7, 2009
Grant Date -
Jul 19, 2007
app pub date -
Jan 17, 2006
filing date -
Jan 17, 2006
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Abstract
A method of electrically isolating a MEMS device is provided. In one example, a piezo-resistive pressure sensor having an exposed silicon region undergoes a Local Oxidation of Silicon (LOCOS) process. An electrically insulating structure is created in the LOCOS process. The insulating structure has a rounded, or curved, interface with the piezo-resistive pressure sensor. The curved interface mitigates stresses associated with exposure to high temperatures and pressures. Additionally, the electrically insulating line may be patterned so that it has curved angles, further mitigating stress.
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