Method and system for mask pattern correction
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United States of America Patent
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Jul 20, 2004
Grant Date -
Feb 27, 2003
app pub date -
Aug 22, 2002
filing date -
Aug 27, 2001
priority date (Note) -
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status (Latency Note)
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Abstract
A method and system for mask pattern correction are disclosed. A portion of a mask pattern is segmented into segments (22) that include a base segment (22a) and a relational segment (22b). The relational segment (22b) is matched with the base segment (22a). A proximity correction is determined for the base segment (22a), and a critical dimension correction is determined for the relational segment (22b). The critical dimension correction is determined with respect to the proximity correction of the matching base segment (22a).
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