Method for forming a source/drain of a semiconductor device having an insulating stack in a recess structure

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United States of America Patent

PATENT NO 11664423
SERIAL NO

16996647

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Abstract

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The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, an insulating stack formed over the substrate, a vertical structure formed through the insulating stack, a source/drain region formed over the vertical structure, and an isolation structure formed adjacent to the source/drain region and protruding the insulating stack. The source/drain region can include a first side surface and a second side surface. A lateral separation between the first side surface and the vertical structure can be greater than an other lateral separation between the second side surface and the vertical structure.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chia-Der Hsinchu, TW 38 119
Chen, Chao-Shuo Hsinchu, TW 4 1
Lee, Yi-Jing Hsinchu, TW 88 2265

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