System and method for adjusting the ratio of deposition times to optimize via density and via fill in aluminum multilayer metallization
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United States of America Patent
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Mar 13, 2007
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N/A
app pub date -
Aug 24, 2004
filing date -
Apr 26, 2004
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Abstract
A system and method is disclosed for adjusting the ratio of deposition times to optimize via density and via fill in an aluminum multilayer metallization process during a manufacturing process of a semiconductor wafer. In a two-step cold/hot aluminum sputtering process via fill becomes more challenging as via density increases. The invention increases the percentage of successful via fills by changing the ratio of the cold/hot deposition times. Denser via structures require extended cold deposition times to compensate for higher via density. The percentage of successful via fills was increased from forty percent (40%) to seventy percent (70%) by changing the ratio of the cold/hot deposition times from 60:40 to 79:21.
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