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Abstract

A method for producing a light-emitting diode includes the steps of: forming a single-layered or multi-layered Al.sub.x Ga.sub.y In.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) light-emitting layer, an Al.sub.x Ga.sub.y In.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) intermediate layer of a second conductivity type, and an Al.sub.x Ga.sub.y In.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) current diffusion layer of a second conductivity type on a GaAs substrate of a first conductivity type; forming a first electrode of a first conductivity type and a second electrode of a second conductivity type so as to contact the GaAs substrate and the current diffusion layer, respectively; forming a protection film on exposed surfaces of the current diffusion layer and the second electrode; forming grooves by dicing so as to interpose the second electrode and to reach the GaAs substrate; etching the light-emitting layer, the intermediate layer, and the current diffusion layer by 4 .mu.m or more with a bromine-type etchant from positions each facing the grooves in a direction parallel to a surface of the substrate so as not to reach an end portion of each of the adjacent second electrodes; and removing the protection film formed on the current diffusion layer and the second electrode.

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