Manufacturing method for semiconductor structure and semiconductor structure

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11978637
APP PUB NO 20230057460A1
SERIAL NO

17439002

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Abstract

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The present disclosure provides a manufacturing method for semiconductor structure and a semiconductor structure. The manufacturing method includes: providing a substrate; forming first mask patterns and first mask openings on the substrate, the first mask opening being located between the adjacent first mask patterns; forming second mask patterns and second mask openings on the first mask patterns and the first mask openings, the second mask opening being located between the adjacent second mask patterns; and forming first patterns and first openings on the substrate based on the first mask patterns, the first mask openings, the second mask patterns and the second mask openings.

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Patent Owner(s)

  • CHANGXIN MEMORY TECHNOLOGIES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Enhao Hefei, CN 3 2

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